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Memory disturbance recovery mechanism

机译:记忆障碍恢复机制

摘要

Components of a memory system, such as a memory controller and memory device, which detect accumulated memory read disturbances and correct such disturbances before they reach a level that causes errors. The memory device includes a memory array and a disturbance control circuit. The memory array includes a plurality of memory rows. Each memory row is associated with a disturbance warning circuit having a state that corresponds to an accumulated disturbance in the memory row. The disturbance control circuit determines, responsive to an activation of a memory row of the plurality of memory rows specified by a row access command, whether the disturbance condition is present in the memory row based on the state of the disturbance warning circuit associated with the memory row. If a disturbance condition is present, the disturbance control circuit causes a recovery operation to be performed on the memory row to reduce the accumulated disturbances.
机译:存储系统的组件,例如存储控制器和存储设备,可以检测累积的内存读取干扰并在此类干扰达到导致错误的级别之前对其进行纠正。该存储装置包括存储阵列和干扰控制电路。存储器阵列包括多个存储器行。每个存储行与状态对应于该存储行中累积的干扰的干扰警告电路相关联。干扰控制电路响应于由行访问命令指定的多个存储器行中的一个存储器行的激活,基于与存储器相关联的干扰警告电路的状态来确定该存储器行中是否存在干扰条件。行。如果存在干扰条件,则干扰控制电路使对存储行执行恢复操作以减少累积的干扰。

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