METHOD AND APPARATUS FOR SUPPRESSING METAL-GATE CROSS-DIFFUSION IN SEMICONDUCTOR TECHNOLOGY

摘要

An inverter includes: a PMOS comprising: a p-type source region, a p-type drain region, a p-channel region between the p-type source region and the p-type drain region, and a PMOS metal gate region; a NMOS, comprising: an n-type source region, an n-type drain region, an n-channel region between the n-type source region and the n-type drain region, and a NMOS metal gate region; an insulating layer above the p-channel region and the n-channel region, wherein the PMOS metal gate region and the NMOS metal gate region are above the insulating layer; and a gate contact between the NMOS metal gate region and the PMOS metal gate region.