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pH SENSOR WITH SUBSTRATE OR BONDING LAYER CONFIGURED TO MAINTAIN PIEZORESISTANCE OF THE ISFET DIE

机译:pH传感器具有基底层或粘结层,可保持ISFET模具的压敏电阻

摘要

Embodiments described herein provide for a pH sensor that is configured for use over a pressure and temperature range. The ISFET die of the pH sensor is bonded to the substrate of the pH sensor with a bonding layer that is disposed between the substrate and the ISFET die. The pressure and temperature change across the pressure and temperature range generates an environmental force in the pH sensor. Further, the substrate or the bonding layer or both change volume over the pressure and temperature range, and the substrate or the bonding layer or both are configured such that the volume change induces a counteracting force that opposes at least a portion of the environmental force. The counteracting force is configured to maintain the change in piezoresistance of the ISFET die from the drain to the source to less than 0.5% over the pressure and temperature range.
机译:本文描述的实施例提供一种被配置用于在压力和温度范围内使用的pH传感器。 pH传感器的ISFET管芯通过设置在衬底与ISFET管芯之间的结合层结合至pH传感器的衬底。压力和温度范围内的压力和温度变化会在pH传感器中产生环境力。此外,基板或粘合层或两者在压力和温度范围内改变体积,并且基板或粘合层或两者被配置为使得体积改变引起与环境力的至少一部分相反的反作用力。配置该反作用力以在压力和温度范围内将ISFET芯片从漏极到源极的压阻变化保持在0.5%以下。

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