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Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the device
Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the device
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机译:包括具有计算的面积平均圆度的氮化铝层的半导体器件及其制造方法
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摘要
The semiconductor device includes a SiC substrate; an aluminum nitride layer provided on the substrate and having an island-shaped pattern consisting of plural islands: a channel layer provided on the AlN layer and comprising a nitride semiconductor; an electron supplying layer provided on the channel layer and having a band gap larger than that of the channel layer; and a gate, source and drain electrodes on the electron supply layer. The AlN layer has an area-averaged circularity Y/X of greater than 0.2. Y is a sum of values obtained by multiplying circularities of the plural islands by areas of the plural islands respectively, X is a sum of the areas of the plural islands. The circularity are calculated by a formula of (4π×area)/(length of periphery)2 where the area and the length of periphery are an area and a length of periphery of each island.
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