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Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density
Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density
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机译:具有铁界面层和氧化层的自由层,可实现高垂直各向异性能量密度
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摘要
A mechanism is provided for a spin torque transfer random access memory device. A tunnel barrier is disposed on a reference layer, and a free layer is disposed on the tunnel barrier. The free layer includes an iron layer as a top part of the free layer. A metal oxide layer is disposed on the iron layer, and a cap layer is disposed on the metal oxide layer.
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