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Method for forming patterns of dense conductor lines and their contact pads, and memory array having dense conductor lines and contact pads
Method for forming patterns of dense conductor lines and their contact pads, and memory array having dense conductor lines and contact pads
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机译:形成密集导体线及其接触垫的图案的方法以及具有密集导体线和接触垫的存储器阵列
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摘要
A method for forming patterns of dense conductor lines and their contact pads is described. Parallel base line patterns are formed over a substrate. Each of the base line patterns is trimmed. Derivative line patterns and derivative transverse patterns are formed as spaces on the sidewalls of the trimmed base line patterns, wherein the derivative transverse patterns are formed between the ends of the derivative line patterns and adjacent to the ends of the trimmed base line patterns. The trimmed base line patterns are removed. At least end portions of the derivative line patterns are removed, such that the derivative line patterns are separated from each other and all or portions of the derivative transverse patterns become patterns of contact pads each connected with a derivative line pattern.
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