Systems and methods for high aspect ratio flip-chip interconnects

摘要

Interconnect and/or reflow methods of the present disclosure achieve high aspect ratio interconnects, for example interconnects having an aspect ratio as high as 4, in addition to wider interconnect height tolerances among interconnects (for example, interconnects having a height variability of up to about 30%) while still achieving reliable electrical connections. Moreover, flip-chip interconnects configured in accordance with principles of the present disclosure can provide improved z-axis spacing between die-to-die and/or die-to-substrate flip chip stacks, for example z-axis spacing as large as 600 μm. In this manner, additional spacing can be achieved for MEMS devices and/or similar components that are extendable and/or deformable out of the die plane.