首页>
外国专利>
Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edges
Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edges
展开▼
机译:制造具有鳍结构的存储器单元的方法,鳍结构具有半圆形的顶表面以及圆形的顶角和边缘
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods for fabricating a FIN structure with a semicircular top surface and rounded top surface corners and edges are disclosed. As a part of a disclosed method, a FIN structure is formed in a semiconductor substrate. The FIN structure includes a top surface having corners and edges. The FIN structure is annealed where the annealing causes the top surface to have a semicircular shape and the top surface corners and edges to be rounded.
展开▼