Methods for etching through-silicon vias with tunable profile angles

摘要

The present disclosure provides methods for etching through-silicon vias (TSVs) in a substrate. The method employs a cyclic polymer passivation layer deposition, depassivation process and plasma etching process. By alternating the duration performed in the plasma etching process and the polymer passivation deposition process during the TSVs formation process, a good sidewall profile and via depth control may be obtained.