Integrated circuit having heterostructure FinFET with tunable device parameters and method to fabricate same

摘要

A field effect transistor (FET) device has a fin disposed over a substrate. The fin has opposing ends defining a source and a drain and intermediate the source and the drain a channel underlying a gate. The fin is formed as a heterostructure having at least one first layer of material and at least one second layer of material that is adjacent to the first layer of material. A thickness of at least one of the first layer of material and the second layer of material is selected to obtain a particular effective device width W. Methods to fabricate the FET device are also described.