Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors

摘要

An array includes vertically-oriented transistors, rows of access lines, and columns of data/sense lines. Individual of the rows include an access line interconnecting transistors in that row. Individual of the columns include a data/sense line interconnecting transistors in that column. The data/sense line has silicon-comprising semiconductor material between the transistors in that column that is conductively-doped n-type with at least one of As and Sb. The conductively-doped semiconductor material of the data/sense line includes a conductivity-neutral dopant between the transistors in that column. Methods are disclosed.