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Method for preparing nano-sheet array structure of group V-VI semiconductor
Method for preparing nano-sheet array structure of group V-VI semiconductor
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机译:V-VI族半导体纳米片阵列结构的制备方法
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摘要
The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.
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