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Method for making solar cell having crystalline silicon P—N homojunction and amorphous silicon heterojunctions for surface passivation
Method for making solar cell having crystalline silicon P—N homojunction and amorphous silicon heterojunctions for surface passivation
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机译:具有用于表面钝化的具有晶体硅PN同质结和非晶硅异质结的太阳能电池的制造方法
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摘要
A thin silicon solar cell is described. An example solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer. A final layer of transparent conductive oxide is formed on both sides. Metal contacts are applied to the transparent conductive oxide.
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