首页>
外国专利>
Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof
Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof
展开▼
机译:能够减少相邻字线或相邻晶体管的影响的半导体器件及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device capable of reducing influences of adjacent word lines is provided in the present invention. The semiconductor device includes: a substrate, and a word line disposed in the substrate. The word line includes: a gate electrode, a gate dielectric layer disposed between the gate electrode and the substrate and at least one first charge trapping dielectric layer disposed adjacent to the gate electrode, wherein the first charge trapping dielectric layer comprises HfO2, TiO2, ZrO2, a germanium nanocrystal layer, an organic charge trapping material, HfSiOxNy, or MoSiOqNz.
展开▼
机译:在本发明中提供了一种能够减小相邻字线的影响的半导体器件。该半导体器件包括:基板;和设置在该基板中的字线。字线包括:栅电极,设置在栅电极和基板之间的栅介电层和与栅电极相邻设置的至少一个第一电荷捕获介电层,其中第一电荷捕获介电层包括HfO 2 Sub>,TiO 2 Sub>,ZrO 2 Sub>,锗纳米晶层,有机电荷捕获材料,HfSiO x Sub> N y Sub>,或MoSiO q Sub> N z Sub>。
展开▼