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Integrated circuit structure to resolve deep-well plasma charging problem and method of forming the same
Integrated circuit structure to resolve deep-well plasma charging problem and method of forming the same
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机译:解决深阱等离子体充电问题的集成电路结构及其形成方法
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摘要
During various processing operations, ions from process plasma may be transfer to a deep n-well (DNW) formed under devices structures. A reverse-biased diode may be connected to the signal line to protect a gate dielectric formed outside the DNW and is connected to the drain of the transistor formed inside the DNW.
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