Adjustable gate and/or body resistance for improved intermodulation distortion performance of radio-frequency switch

摘要

Radio-frequency (RF) switch circuits are disclosed having adjustable resistance to provide improved switching performance. RF switch circuits include at least one field-effect transistor (FET) disposed between first and second nodes, each of the FET having a respective gate and body. An adjustable-resistance circuit is connected to either or both of the respective gate and body of the FET(s).