首页> 外国专利> Individually addressable band electrode arrays and methods to prepare the same

Individually addressable band electrode arrays and methods to prepare the same

机译:可单独寻址的带状电极阵列及其制备方法

摘要

Band electrode arrays, methods of manufacturing, and a method of using are disclosed. The arrays have individually addressable band electrodes such that diffusion layers of the band electrodes overlap. An exemplary method of manufacturing may comprise: a first insulating layer is disposed on a substrate; a first band electrode is disposed on the first insulating layer; a second insulating layer is disposed on the first insulating layer and completely covers the first band electrode; a second band electrode is disposed on the second insulating layer; a third insulating layer is disposed on the second insulating layer and completely covers the second band electrode; the first and second band electrodes are electrically insulated from each other and individually addressable; cross-sectional surfaces of the first and second band electrodes are exposed on the test surface; and these exposed cross-sectional surfaces substantially overlap each other in a direction perpendicular to the substrate.
机译:公开了带状电极阵列,制造方法和使用方法。阵列具有可单独寻址的带状电极,使得带状电极的扩散层重叠。一种示例性的制造方法可以包括:第一绝缘层设置在基板上;以及第二绝缘层设置在基板上。第一带状电极设置在第一绝缘层上;第二绝缘层设置在第一绝缘层上并完全覆盖第一带状电极。第二带状电极设置在第二绝缘层上。第三绝缘层设置在第二绝缘层上并完全覆盖第二带状电极。第一和第二带状电极彼此电绝缘并且可单独寻址。第一带状电极和第二带状电极的横截面在测试表面上暴露。并且,这些露出的截面在与基板垂直的方向上大致重叠。

著录项

  • 公开/公告号US8901433B2

    专利类型

  • 公开/公告日2014-12-02

    原文格式PDF

  • 申请/专利权人 ANANDO DEVADOSS;

    申请/专利号US201113820994

  • 发明设计人 ANANDO DEVADOSS;

    申请日2011-09-12

  • 分类号H05K1/11;H05K3/10;G01N27/27;H01R43/16;

  • 国家 US

  • 入库时间 2022-08-21 15:17:05

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号