TSV structure with a built-in U-shaped FET transistor for improved characterization

摘要

A through-the silicon via (TSV) structure providing a built-in TSV U-shaped FET that includes an annular gate shaped as a TSV partially embedded in a substrate, the annular gate having an inner and an outer surface bound by an oxide layer; a drain formed on an isolated epitaxial layer on top of the substrate conformally connecting the gate oxide layer surrounding the inner annular surface of the TSV; a source partially contacting said gate oxide layer conformally contacting gate oxide layer surrounding the outer surface of the TSV.