Rapid growth of thin and flexible organic semiconductor single crystals using modified solution technique

摘要

The invention relates to a method for growing a thin and flexible organic molecular semi conductor single crystal from organic semiconductor compound. The process comprises of preparing saturated solution of organic melted crystalline nucleus of the organic semiconductor in carbon disulphide solvent at 30°C. Then the temperature of the saturated solution is increased to 35°C followed by cooling the saturated solution at the cooling rate of 10°C/hour to form crystalline nuclei at around 27°C in the solution. The growth of the crystal is continued gradually and securely in the solution at predetermined temperature gradient. Finally the grown single crystals from the solution are extracted to obtain thin and flexible organic molecular semi conductor single crystal.