Through silicon via with improved reliability

摘要

A semiconductor device includes a substrate (105) having a top surface (109) and a bottom surface (1 10) and a through silicon via (TSV) (103) extending from the top surface (109) of the substrate (105) to the bottom surface (1 10) of the substrate (105) the TSV (103) having a height and a side profile extending along a longitudinal axis (200) where the side profile has an upper segment (201 21 1 301 401 501 601 ) forming a first angle relative to the longitudinal axis (200) and a lower segment (202 212 302 402 502 603) forming a second angle relative to the longitudinal axis (200) where the second angle is different than the first angle and where the lower segment (202 212 302 402 502 603) has a height that is less than 20% of the height of the TSV (103).