首页> 外国专利> METHOD AND DEVICE FOR MEASUREMENT OF TWO-DIMENSIONAL ELECTRON GAS IN A MOSC-HEMT AND AN AMOSFET, BY APPLICATION OF A TRANSVERSE MAGNETIC FIELD

METHOD AND DEVICE FOR MEASUREMENT OF TWO-DIMENSIONAL ELECTRON GAS IN A MOSC-HEMT AND AN AMOSFET, BY APPLICATION OF A TRANSVERSE MAGNETIC FIELD

机译:应用横向磁场测量MOSC-HEMT和AMOSFET中二维电子气的方法和装置

摘要

The invention relates to a method for measuring the two-dimensional electron gas current and two-dimensional hole gas current and the concentration of two-dimensional gas in electrons depending on the gate voltage and source-drain voltage and on the magnetic induction of an external magnetic field applied perpendicular to the source-drain current, by using a device made by integration of a GaN LED with a quantum well, in series with a MOSC-HEMT GaN, and integration of a LED of the same type as the first one, connected to two lateral electrodes on the 25 nm-long spatial load portion and application of a magnetic field perpendicular on the spatial load area and on the direction of the two electrodes, and measurement of the intensity of the light emitted by the two LEDs.
机译:本发明涉及一种根据栅极电压和源极-漏极电压以及外部磁场的感应来测量二维电子气电流和二维空穴气电流以及电子中二维气体浓度的方法。通过使用将GaN LED与量子阱集成在一起,与MOSC-HEMT GaN串联并集成与第一个相同类型的LED制成的器件,垂直于源极-漏极电流施加磁场,将其连接到25纳米长的空间负载部分上的两个横向电极,并在空间负载区域和两个电极的方向上施加垂直的磁场,并测量两个LED发出的光的强度。

著录项

  • 公开/公告号RO130593A2

    专利类型

  • 公开/公告日2015-09-30

    原文格式PDF

  • 申请/专利权人 DOMOKOS ŞTEFAN;

    申请/专利号RO20130001004

  • 发明设计人 DOMOKOS ŞTEFAN;

    申请日2013-12-17

  • 分类号H01L21/02;

  • 国家 RO

  • 入库时间 2022-08-21 15:13:11

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