METHOD FOR DETERMINING time constant of charge storage with dielectric in NANOCRYSTALLINE CELLS of permanent memory structure with metal-insulator-semiconductor structure

摘要

The invention relates to the field of semiconductor technology, namely, the non-volatile memory. A method for determining the time constant of dielectric charge storage with nanocrystalline cell of permanent memory with the metal-insulator-semiconductor structure is to measure the voltage-farad characteristics of a memory cell with a maximum voltage amplitude, with determination of the minimum capacity of the cell and determining the capacity of plane areas. After that the cell is programmed with application of a pulse, with periodically measuring the flat-zone voltage, with determining the time dependence of the flat-zone voltage and determination of the constant of charge storage time by approximating the dependence of flat-zone voltage. The technical result of the invention is to improve the speed and accuracy of determining the storage time in memory devices with complex form of time dependence of the flat-zone voltages.