REDUCED TRACE METALS CONTAMINATION ION SOURCE FOR AN ION IMPLANTATION SYSTEM

摘要

An ion source chamber (120) for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode (124) to ionize gas molecules injected into an inferior of the housing; a liner section (133, 135, 137, 139) defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield (153) disposed about the cathode; a repeller (180) spaced apart from the cathode; a plate (128) including a source aperture (126) for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material of the formula SiCx having excess carbon.