REDUCED TRACE METALS CONTAMINATION ION SOURCE FOR AN ION IMPLANTATION SYSTEM

摘要

ion source chamber for ion implantation system 120, a housing which at least partially defined by the ionization region, to move from this ionization area high energy electrons to the cathode 124 through the housing to ionize the gas molecules injected into the inner housing; A liner section (133, 135, 137, 139) defining the inner wall of the housing one or more than the interior, each liner section including the surface to the internal exposure to the ionizing region during operation of the ion implantation system, the liner section; The cathode shield (153) disposed about the cathode; Spaced apart from the cathode repeller (180); It includes a plate 128 including a hole source 126 for emitting the ions from the ion source chamber, repeller, liner section, the cathode shield; At least one of the inserts in the plate defining the plate, or a source hole is including silicon carbide, and the silicon carbide of the formula SiC _{x nonstoichiometric sintered material of} with an excess of carbon. ;