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LOW-Α-EMISSION BISMUTH AND PROCESS FOR PRODUCING LOW-Α-EMISSION BISMUTH
LOW-Α-EMISSION BISMUTH AND PROCESS FOR PRODUCING LOW-Α-EMISSION BISMUTH
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机译:低α-发射铋和生产低α-发射铋的方法
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摘要
Bismuth characterized by having an α-ray emission of 0.007 cph/cm2 or less; and a process for producing low-α-emission bismuth, characterized by using bismuth having an α-ray emission of 0.15 cph/cm2 or less as a starting material, electrolytically producing a bismuth nitrate solution having a bismuth concentration of 5-50 g/L and a pH of 0.0-0.4, adding a 20-60% aqueous solution of sodium hydroxide to the solution to yield a sediment including polonium, separating the resultant mixture into a sediment (1) and a filtrate (1) by filtration, and then subjecting the filtrate (1) to electrowinning to recover the bismuth. Since recent semiconductor devices have a heightened density and an increased capacity, the risks that software errors occur are increasing due to the influence of α rays from materials present around the semiconductor chips. In particular, the solder materials to be used in the close vicinity to semiconductor devices are strongly desired to have a higher purity, and materials reduced in α rays are also desired. Thus, the present invention addresses the problem of obtaining high-purity bismuth which is reduced in α-ray emission and is usable as the demanded materials.
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机译:铋的特征在于,其α射线的辐射为0.007cph / cm 2 Sup>以下。及其制备低α-发射铋的方法,其特征在于,使用α射线发射率为0.15 cph / cm 2 Sup>的铋作为起始原料,电解生产具有如下特征的硝酸铋溶液:铋的浓度为5-50 g / L,pH值为0.0-0.4,向溶液中添加20-60%的氢氧化钠水溶液,得到包括including的沉淀物,将所得混合物分离为沉淀物(1)和通过过滤除去滤液(1),然后对滤液(1)进行电解沉积以回收铋。由于最近的半导体器件具有提高的密度和增加的容量,由于来自半导体芯片周围的材料的α射线的影响,发生软件错误的风险正在增加。特别地,强烈期望在半导体器件附近使用的焊料材料具有更高的纯度,并且还期望减少α射线的材料。因此,本发明解决了获得高纯度铋的问题,该铋的α射线发射降低并且可用作所需材料。
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