SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE SIGE/SI FIN STRUCTURE

摘要

A semiconductor device (100) includes a semiconductor-on-insulator substrate (102) having an insulator layer (104), and at least one silicon germanium (SiGe) fin (122) having a superlattice structure. The SiGe fin (122) is formed on an upper surface of the insulator layer (104). A gate stack (108) is formed on an upper surface of the at least one silicon germanium fin (122). The gate stack (108) includes first and second opposing spacers (116) defining a gate length (1 GATE) therebetween. First and second epitaxial source/ drain structures (124, 126) are formed on the insulator layer (104). The first and second epitaxial source/drain structures (124, 126) extend beneath the spacers (116) to define a silicon germanium gate channel (132) beneath the gate stack (108).