首页> 外国专利> METHOD FOR PREPARING DISILANE, TRISILANE, TETRASILANE GAS THROUGH DIELECTRIC BARRIER DISCHARGE FROM SILANE GAS

METHOD FOR PREPARING DISILANE, TRISILANE, TETRASILANE GAS THROUGH DIELECTRIC BARRIER DISCHARGE FROM SILANE GAS

机译:通过硅烷气体介电壁垒放电制备二甲硅烷,三硅烷,四硅烷气体的方法

摘要

The present invention relates to a method for preparing disilane, trisilane, and tetrasilane gas through dielectric barrier discharge (DBD) from silane gas. More specifically, the present invention relates to a method for preparing disilane, trisilane, and tetrasilane gas from silane gas through dielectric barrier discharge, in which disilane can be obtained from silane through a continuous process by using an dielectric barrier discharge reactor, and it is possible to achieve 50-85% of continuous yield depending on a reaction condition and to use a broad range of reaction conditions such as reaction pressure and reaction temperature by installing an electrode surrounded by an insulator inside of the reactor, mixing hydrogen with helium or nitrogen inert gas as raw gas, and simultaneously injecting the mixture with silane gas in a predetermined range.;COPYRIGHT KIPO 2015
机译:本发明涉及一种通过从硅烷气体中进行介电势垒放电(DBD)来制备乙硅烷,乙硅烷和乙硅烷气体的方法。更具体地,本发明涉及通过介电势垒放电从硅烷气体制备乙硅烷,三硅烷和四硅烷气体的方法,其中可以通过使用介电势垒放电反应器通过连续工艺从硅烷中获得乙硅烷。通过在反应器内部安装一个被绝缘子包围的电极,将氢气与氦气或氮气混合,可以根据反应条件实现连续收率的50%至85%,并使用广泛的反应条件,例如反应压力和反应温度惰性气体作为原料气,并在预定范围内同时注入硅烷气体。; COPYRIGHT KIPO 2015

著录项

  • 公开/公告号KR20140144595A

    专利类型

  • 公开/公告日2014-12-19

    原文格式PDF

  • 申请/专利权人 YUICHI IIKUBO;JANG HYANG JA;

    申请/专利号KR20130066751

  • 发明设计人 JANG HYANG JAKR;YUICHI IIKUBOUS;

    申请日2013-06-11

  • 分类号C01B33/021;C01B33/04;B01J19/12;B01J7/00;

  • 国家 KR

  • 入库时间 2022-08-21 15:01:23

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