首页> 外国专利> ADAPTIVE ELECTROSTATIC DISCHARGE(ESD) PROTECTION OF DEVICE INTERFACE FOR LOCAL INTERCONNECT NETWORK(LIN) BUS AND THE LIKE

ADAPTIVE ELECTROSTATIC DISCHARGE(ESD) PROTECTION OF DEVICE INTERFACE FOR LOCAL INTERCONNECT NETWORK(LIN) BUS AND THE LIKE

机译:局部互连网络(LIN)总线和类似总线的设备接口的自适应静电放电(ESD)保护

摘要

The adaptive electrostatic discharge (ESD) protection of the device interface has very good ESD robustness when handled or when installed in or removed from the system, and has robust immunity to DPI, EMI, etc. when operating in the system. There is an important capacitive coupling between the drain and gate of the ESD protection MOS device to improve ESD protection and reduce the snapback voltage when there is no DPI on the external connections to be protected (or at low levels). Thus, when a significant DPI / EMI signal is detected at the external connection, the capacitive coupling between the drain and gate of the MOS ESD protection device is isolated, bypassed or attenuated to improve the device's DPI / EMI immunity.
机译:设备接口的自适应静电放电(ESD)保护在处理或安装在系统中或从系统中卸下时具有非常好的ESD鲁棒性,并且在系统中运行时具有对DPI,EMI等的强大抵抗力。当要保护的外部连接上没有DPI时(或处于低电平时),ESD保护MOS器件的漏极和栅极之间存在重要的电容耦合,以改善ESD保护并降低反跳电压。因此,当在外部连接处检测到重要的DPI / EMI信号时,MOS ESD保护器件的漏极和栅极之间的电容耦合将被隔离,旁路或衰减,以提高器件的DPI / EMI抵抗力。

著录项

  • 公开/公告号KR101467441B1

    专利类型

  • 公开/公告日2014-12-01

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20107008914

  • 申请日2008-11-21

  • 分类号H01L27/04;H01L27/02;H02H9/04;

  • 国家 KR

  • 入库时间 2022-08-21 15:01:12

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