首页> 外国专利> Fabrication method for synthesizing a BixSb2-xTe3 thermoelectric nanocompound and thermoelectric nanocompound thereby

Fabrication method for synthesizing a BixSb2-xTe3 thermoelectric nanocompound and thermoelectric nanocompound thereby

机译:合成BixSb2-xTe3热电纳米化合物的制备方法及由此制备的热电纳米化合物

摘要

invention Bi, Sb and Te precursors and the solvent added to the Bi-Sb-Te solution was prepared a step (step 1); To prepare a Bi-Sb-Te hydrate aqueous solution in a mixture of Bi-Sb-Te base solution prepared in the step 1 (step 2); Bi by introducing a reducing agent to the Bi-Sb-Te hydrate prepared in the step 2 through the reduction of liquid phase at room temperature x Sb 2 - x Te 3 preparing a reaction (step 3); Bi prepared in step 3 x Sb 2 - x Te 3 reaction (step 4) to aging; And Bi subjected to aging in step 4 x Sb 2 - x Te 3 The reaction was filtered and dried Bi x Sb 2 - x Te 3 preparing nanoparticles (step 5); Bi containing the x Sb 2 - x Te provides 3 method for producing a nano-compound thermoelectric material (2 0 & ; x & lt). According to the present invention is manufactured through a liquid phase reduction process Bi x Sb 2 - x Te 3 nano-compound can form nanoparticles with uniform block the growth of the particles by not a separate heat treatment for removing chemical additives. Therefore, Bi x Sb 2 - x Te 3 particles of nano compounds Depending on the level of 1 to 150 nm formed by a homogeneous size distribution with a Bi x Sb 2-x Te 3 the thermal conductivity of the nano-compound to decrease and ultimately improves the thermoelectric figure of merit. ;
机译:发明步骤Bi,Sb和Te的前驱体和添加到Bi-Sb-Te溶液中的溶剂的制备步骤(步骤1);在步骤1中制备的Bi-Sb-Te碱溶液的混合物中制备Bi-Sb-Te水合物水溶液(步骤2);通过在室温下通过还原液相 x Sb 2 -<在步骤2中制备的Bi-Sb-Te水合物中引入还原剂来形成Bi / Sub> x Te 3 准备反应(步骤3);在步骤3 x Sb 2 - x Te 3 反应中制备的Bi(步骤4)老化;并且Bi在步骤4 x Sb 2 - x Te 3 中进行老化将反应物过滤并干燥Bi x Sb 2 - x Te 3 纳米颗粒(步骤5);包含 x Sb 2 - x Te 的Bi提供了3 方法来生成纳米化合物热电材料(2 0&lt ;; x&lt)。根据本发明,通过液相还原法Bi x Sb 2 - x Te 3 纳米化合物可以通过不进行单独的热处理来去除化学添加剂的方式,形成均匀阻塞纳米颗粒生长的纳米颗粒。因此,Bi x Sb 2 - x Te 3 纳米化合物颗粒Bi x Sb 2-x Te 3 的均匀尺寸分布在1至150 nm的水平上纳米化合物可以减少并最终改善热电性能。 ;

著录项

  • 公开/公告号KR101473751B1

    专利类型

  • 公开/公告日2014-12-18

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20130048092

  • 申请日2013-04-30

  • 分类号H01L35/34;H01L35/16;H01L35/18;

  • 国家 KR

  • 入库时间 2022-08-21 15:01:06

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