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HOLE-BLOCKING SILICON/TITANIUM-OXIDE HETEROJUNCTION FOR SILICON PHOTOVOLTAICS

机译:硅光阻孔硅/二氧化钛异质结

摘要

A hole-blocking silicon/titanium-oxide heterojunction for silicon photovoltaic devices and methods of forming are disclosed. The electronic device includes at least two electrodes having a current path between the two electrodes. The electronic device also includes a heterojunction formed of a titanium-oxide layer deposited over a Si layer and being disposed in the current path. The heterojunction is configured to function as a hole blocker. The first electrode may be electrically coupled to the Si layer and a second electrode may be electrically coupled to the titanium-oxide layer. The device may also include a PN junction disposed in the Si layer, in the current path. The device may also include an electron-blocking heterojunction on silicon in the current path.
机译:公开了用于硅光伏器件的阻挡空穴的硅/氧化钛异质结及其形成方法。该电子设备包括至少两个电极,该至少两个电极在两个电极之间具有电流路径。该电子设备还包括由沉积在Si层上并布置在电流路径中的氧化钛层形成的异质结。异质结被配置为用作空穴阻挡剂。第一电极可以电耦合到Si层,第二电极可以电耦合到氧化钛层。该器件还可包括在电流路径中设置在Si层中的PN结。该器件还可以在电流路径中的硅上包括一个电子阻挡异质结。

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