BONDING STRUCTURE FOR A MICROELECTRONIC ASSEMBLY COMPRISING A HIGH MELTING POINT ALLOY FORMED BY BONDING TWO BOND COMPONENTS EACH COMPRISING A NON-LOW MELTING POINT MATERIAL LAYER COVERING A LOW MELTING POINT MATERIAL LAYER AND CORRESPONDING MANUFACTURING METHOD

摘要

The microelectronic assembly 10, 110, 210, 310, 410 includes a first substrate 12 having first conductive elements 26, 126, 226, 326, 426, 526, 626, 726, 826, 926, The second substrate 14, 114, 214, 314, and 316 having the second conductive elements 26, 126, 226, 326, 426, 112, 212, 312, 412, 512, 612, 712, 812, 912, 414). The assembly includes a first material, a second material, and a third material bonded to the first and second conductive elements (26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022) And further includes alloy masses (16, 116) including a material and having electrical conductivity. Each of the first and second materials of the alloy mass (16, 116) has a melting point lower than the melting point of the alloy. The concentration of the first material is increased from the relatively high value at the side of the first conductive element 26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022 to the second conductive element 26, 126, 226, 326, 426), and the concentration of the second material changes from a relatively high value at the side of the second conductive element (26, 126, 226, 326, 426) Changes to a relatively low value on the side of the conductive elements 26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022. The microelectronic assembly 10, 110, 210, 310, 410 includes: a first substrate 12, 112, 212, 312, 412, 512, 612 having first bonding components 30, Aligning the first bonding component (30, 230) with the second substrate (14, 114, 214, 314, 414) having a second bonding component (40, 240, 340, 440) , 330, 430, 1030) and the second bonding component (40, 240, 340, 440) are brought into contact with each other, wherein the first bonding component (30, 230, 330, 430, 1030) The first material layer 36, 536, 636, 736, 836, 936 adjacent to the first conductive element 26, 126, 226, 326, 426, 526, 626, 726, 826, 926, 1022, Wherein the first bonding layer comprises a first protective layer (38, 538, 638, 738, 838, 938) that overlaps the material layer (36, 536, 636, 736, 836, 936) 340, 440) comprises a second material layer (46) adjacent to the second conductive element (26), and a second protective layer (48) overlying the second material layer (46); And By heating the first bonding component 30, 230, 330, 430 or 1030 and the second bonding component 40, 240, 340 or 440, the first material layer 36, 536, 636, 736, 836 and 936 and at least portions of the second material layer 46 are diffused together so that the first substrate 12, 112, 212, 312, 412, 512, 612, 712, 812, 912 and the second substrate 14 , 114, 214, 314, 414 to each other with respect to each other. A plurality of first conductive elements 26, 126, 226, 326, 426, 526, 626, 726, and 726 formed on the first substrate 12, 112, 212, 312, 412, 512, 612, 712, 812, A plurality of second conductive elements (26, 126, 226, 326, 426) formed on the second substrate (14, 114, 214, 314, 414) (16, 116). The inner volume, which may be surrounded by the conductive alloy mass 116, may be hermetically sealed.