首页> 外国专利> POLYIMIDE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SAID POLYIMIDE PRECURSOR, AND CURED-PATTERN-FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE USING SAID PHOTOSENSITIVE RESIN COMPOSITION

POLYIMIDE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SAID POLYIMIDE PRECURSOR, AND CURED-PATTERN-FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE USING SAID PHOTOSENSITIVE RESIN COMPOSITION

机译:聚酰亚胺前体,包含所述聚酰亚胺前体的光敏树脂组合物以及使用所述光敏树脂组合物的固化图案膜的制造方法和半导体装置

摘要

A polyimide precursor including a structural unit represented by the following general formula (1) in a ratio of 50 mol % or more based on the total structural units. In the general formula (1), A is a tetravalent organic group represented by the following general formula (2a), a tetravalent organic group represented by the following general formula (2b), or a tetravalent organic group represented by the following general formula (2c), and B is a divalent organic group represented by the following general formula (3).
机译:聚酰亚胺前体,其包含相对于全部结构单元为50摩尔%以上的下述通式(1)表示的结构单元。通式(1)中,A为下述通式(2a)表示的四价有机基团,下述通式(2b)表示的四价有机基团或下述通式(2)表示的四价有机基团。 B为下述通式(3)表示的二价有机基团。

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