首页> 外国专利> HIGH FREQUENCY SIGNAL GENERATOR USING RF NEGATIVE RESISTANCE CIRCUIT WITH COMPLEMENTARY CROSS-COUPLED OSCILLATOR TOPOLOGY

HIGH FREQUENCY SIGNAL GENERATOR USING RF NEGATIVE RESISTANCE CIRCUIT WITH COMPLEMENTARY CROSS-COUPLED OSCILLATOR TOPOLOGY

机译:射频负电阻电路与互补交叉耦合振荡器拓扑的高频信号发生器

摘要

The present invention relates to a high frequency signal generator using a CMOS process. The high frequency signal generator of the present invention includes an RF negative resistance circuit and a complementary oscillator cross-coupled with the RF negative resistance circuit. The RF negative resistance circuit comprises a first inductor and a pair of RF negative resistance transistors. The RF negative resistance transistors are an N-channel metal oxide semiconductor (NMOS) where a drain is connected to a power source, the gate is connected to both ends of the first inductor, and a source is connected to the complementary oscillator. According to the present invention, a high frequency signal generator is realized by using a complementary oscillator structure cross-coupled with an RF negative resistance circuit. Thereby, high oscillation frequency can be generated.
机译:本发明涉及一种使用CMOS工艺的高频信号发生器。本发明的高频信号发生器包括RF负电阻电路和与RF负电阻电路交叉耦合的互补振荡器。 RF负电阻电路包括第一电感器和一对RF负电阻晶体管。 RF负电阻晶体管是N沟道金属氧化物半导体(NMOS),其中漏极连接到电源,栅极连接到第一电感器的两端,而源极连接到互补振荡器。根据本发明,通过使用与RF负电阻电路交叉耦合的互补振荡器结构来实现高频信号发生器。由此,可以产生高振荡频率。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号