PRECURSOR COMPOUND, THIN FILM DEPOSITION METHOD USING SAME, AND AMORPHOUS SILICON FILM DEPOSITION METHOD

摘要

According to an embodiment of the present invention, a precursor compound is represented by chemical formula 1, and R^1 is any one of a halide group, hydrogen, an alkyl group, a cyclic alkyl group, a phenyl group, or silyl group. The alkyl group has 1 to 4 carbon atoms, and the cyclic alkyl group has 4 to 7 carbon atoms.;COPYRIGHT KIPO 2015