METHOD FOR MANUFACTURING n-DOPED GRAPHENE AND ELECTRICAL DEVICE BY USING AMMONIUM FLUORIDE, AND GRAPHENE AND ELECTRICAL DEVICE MANUFACTURED THEREBY

摘要

The present invention relates to a method for manufacturing n-doped graphene and an electrical device, and graphene and an electrical device manufactured thereby. More specifically, the present invention relates to a method for manufacturing n-doped graphene and an electrical device by using ammonium fluoride (NH_4F), and to graphene and an electrical device manufactured thereby. The method of the present invention comprises the following steps: (a) preparing graphene and ammonium fluoride (NH_4F); and (b) exposing the graphene to the ammonium fluoride (NH_4F). Through the step (b), a fluorine layer distributed to some or all of the upper and lower surfaces of a graphene layer is formed, and an ammonium atomic group is adsorbed (physisorption) to the upper and lower surfaces of the graphene layer, or to some or all of a defect between carbon atoms constituting the graphene layer. According to the present invention, excellent electrical properties of graphene such as charge mobility or the like can be maintained or much improved while n-doping the graphene.;COPYRIGHT KIPO 2016