Instead of monitoring the optical power coming from the waveguide, a device or system performance is affected the direct way to monitor the optical power of the wave guide is provided without giving the internal . The waveguide and the TPA induced current generated , the reverse bias to the diode and a pin structure can be enhanced . TPA probe current by the metal contact provided on the upper surface of the waveguide can be directly measured , the wafer-level test can be made available . pin structure may be implemented at any point across the integrated network , and thus in- between to allow the probing of different devices for monitoring and failure analysis for estimating power ;
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