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MICROWAVE INTRODUCTION MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA TREATMENT DEVICE

机译:微波导入机理,微波等离子体源和微波等离子体处理装置

摘要

microwave introduction mechanism (41) is a planar antenna for radiating microwaves into the chamber (81 ) and the antenna unit 80 having , a tuner 60 for impedance matching , comprising a heat-radiating mechanism (90) for radiating the heat of the antenna unit 80, a tuner 60 forming the outer tubular conductor 52 and the inner body 51 which has a part of a microwave transmission conductor 53, outer conductor 52 and an inner conductor (53) movably disposed between the slag (61a, 61b) and slag slag has a drive 70 for moving the heat dissipation apparatus 90 includes a heat input end is located in the antenna unit 80, the heat to transfer heat of the antenna unit 80 to the heat radiation from the heat input stage and the stage pipe 91 and has a heat radiating unit 92 provided in the heat stage . ;
机译:微波引入机构(41)是用于将微波辐射到腔室(81)中的平面天线,并且天线单元80具有用于阻抗匹配的调谐器60,其包括用于辐射天线单元的热量的散热机构(90)。参照图80,调谐器60形成外部管状导体52和内部主体51,该内部主体51具有微波传输导体53的一部分,外部导体52和内部导体53可移动地设置在炉渣61a,61b和炉渣之间。具有用于移动散热装置90的驱动器70,其包括位于天线单元80中的热输入端,该热量将天线单元80的热量传递到来自热输入级和级管91的热辐射,并且具有设置在加热台上的散热单元92。 ;

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