AMINO VINYLSILANE PRECURSORS FOR STRESSED SiN FILMS

摘要

the present invention, an amino silane-based plastic film deposition from a precursor of what to include to a method of increasing the inherent compressive stress in the silicon nitride (SiN) and silicon carbon nitride (SiCN) thin film plasma-enhanced chemical vapor deposition (PECVD). More specifically, the present invention of the formula [RR ¹ N] _x SiR ³ _y (R ² ) _z (wherein, x + y + z = 4, x = 1-3, y = 0-2 and z = 1-3, and; R, R ¹ and R ³ is hydrogen, C ₁ to C ₁₀ alkanes, alkenes, or C ₄ to C ₁₂ be an aromatic and the like; each of R ² is a plastic, it is used a precursor of a selected amino vinylsilane base from a compound of the allyl or vinyl-containing functional group). ;