METHOD FOR PRODUCING PHOTOACTIVE MULTI-LAYER HETEROSTRUCTURE BASED ON MICROCRYSTAL SILICON

摘要

A method of obtaining a multilayer photoactive heterostructure on the basis of monolithically butted sequentially deposited layers of µc-SiO (n), µc-Si: H (i), µc-SiO (p) by plasma-chemical deposition with a hot filament at a pressure in the growth chamber of no more than 8 10 Pa process temperature not exceeding 180 ° С on specially prepared substrates made of borosilicate glass, on which a bonding layer of transparent conductive oxide (for example, ZnO) with a thickness of not more than 100 is applied by HF magnetron deposition (magnetron frequency 13.56 MHz, plasma power 100 W) nm to improve adhesion and reduce the density of defects in the microcrystalline nip heterostructure.