METHOD OF MANUFACTURING LAYERS OF p-TYPE CONDUCTIVITY ON InGaAs CRYSTALS

摘要

FIELD: chemistry.;SUBSTANCE: in method of manufacturing layers of p-type conductivity on InGaAs crystals, including implantation of Be+ ions and post-implantation annealing, the latter is carried out at temperature 570÷580°C with 10÷20 s duration in vacuum or dried neutral atmosphere. In particular case of implementation annealing is performed by radiation of halogen lamps through silicon filter.;EFFECT: increase of manufacturability and reduction of energy consumption in obtaining layers with the best electrophysical properties.;2 cl, 1 dwg