Structures, design structures and a method for the production of imager with global diaphragm

摘要

Pixel sensor cell, which comprises the following:a photodiodes body in a first zone of a semiconductor layer;a floating diffusion node in a second zone of the semiconductor layer, wherein a third zone of the semiconductor layer between the first and second zone is arranged adjoining;a dielectric insulation in the semiconductor layer, wherein the dielectric insulation, the first, second and third zone, the dielectric insulation at the first, second and third zone and the photodiodes body adjoins and the dielectric insulation is not provided at the floating diffusion node, whereby portions of the second zone between the dielectric isolation and the floating diffusion node are located; anda buried electrons shield in the second zone, wherein said buried electrons shield on the dielectric insulation in the second zone and a lower surface of the floating diffusion node, whereby the buried electrons shielding is not up to an upper surface of the semiconductor layer, wherein portions of the second zone between the buried electrons shield and the upper surface of the semiconductor layer are arranged.