METHOD FOR MANUFACTURING AN AREA PIN CORRUGATED AND SPACED DOPED ZONES, APPLICATION TO THE MANUFACTURE OF ELECTRO-OPTICAL SILICON MODULATORS AND GERMANIUM PHOTO-DETECTORS

摘要

The invention relates to a method of manufacturing a PIN edge junction (20, 21) of semiconductor material. According to the invention, a judicious choice is made for definition of hard masks and concatenation of formation of resin masks for implantation (doping) and etching, which makes it possible to use the usual photo-lithography technique despite its weak Alignment accuracy (+/- 100nm) of the masks compared to the areas below. With the method according to the invention, the formation of an edge pin junction is obtained, at lower cost and in a shorter time than the state of the art, with doped zones precisely spaced from the edge of the ridge.