METHOD FOR RELAXING MECHANICAL CROSS-VOLTAGE CONSTRAINTS IN THE ACTIVE REGION OF A MOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT

摘要

Method for the relaxation of transverse mechanical stresses in the active region of a MOS transistor (TR) The method comprises an embodiment of at least one insulating (IN01, ... IN07) insulating in the active region of the transistor separating in two parts each of the drain regions (RD01, ..., RD08), of source (RS08, ..., RS08) and transistor channel. The invention also relates to the integrated circuit comprising the transistor.