首页>
外国专利>
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-ELECTRODE AND METHOD FOR FABRICATION THEREOF
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-ELECTRODE AND METHOD FOR FABRICATION THEREOF
展开▼
机译:具有高反射性卤素电极的半导体发光器件及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.
展开▼