首页> 外国专利> MULTIBIT PROGRAMMING METHOD IN A NON-VOLATILE MEMORY ALLOWING A NUMBER OF DATA STATE-FAILS AND DATA RECOVERY METHOD IN CASE OF PROGRAMMING FAIL

MULTIBIT PROGRAMMING METHOD IN A NON-VOLATILE MEMORY ALLOWING A NUMBER OF DATA STATE-FAILS AND DATA RECOVERY METHOD IN CASE OF PROGRAMMING FAIL

机译:允许多个数据状态失败的非易失性存储器中的多位编程方法以及在编程失败的情况下的数据恢复方法

摘要

An error detection and data recovery operation for a non-volatile memory system. Even after a programming operation for a set of storage elements is successfully completed, the data of some storage elements may be corrupted. For example, erased state storage element may be disturbed by programming of other storage elements. To allow recovery of data in such situations, associated data latches can be configured to allow the erased state storage elements to be distinguished from other data states once programming is completed. Furthermore, a single read operation can be performed after programming is completed. Logical operations are performed using results from the read operation, and values in the data latches, to identify erased state storage elements which have strayed to another data state. If the number of errors exceeds a threshold, a full recovery operation is initiated in which read operations are performed for the remaining states.
机译:非易失性存储系统的错误检测和数据恢复操作。即使对一组存储元件的编程操作成功完成之后,某些存储元件的数据也可能被破坏。例如,擦除状态存储元件可能被其他存储元件的编程干扰。为了在这种情况下恢复数据,可以将关联的数据锁存器配置为一旦编程完成就可以将擦除状态存储元件与其他数据状态区分开。此外,可以在编程完成后执行一次读取操作。使用来自读取操作的结果以及数据锁存器中的值来执行逻辑操作,以识别已误入另一数据状态的擦除状态存储元件。如果错误数量超过阈值,则将启动完全恢复操作,其中将对其余状态执行读取操作。

著录项

  • 公开/公告号EP2529375B1

    专利类型

  • 公开/公告日2016-11-02

    原文格式PDF

  • 申请/专利权人 SANDISK TECHNOLOGIES LLC;

    申请/专利号EP20110703775

  • 发明设计人 DUTTA DEEPANSHU;LUTZE JEFFREY W.;YAN LI;

    申请日2011-01-27

  • 分类号G11C16/34;G11C29;G11C11/56;

  • 国家 EP

  • 入库时间 2022-08-21 14:53:20

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