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BACK-CONTACTED SOLAR CELLS WITH DOPED POLYSILICON REGIONS SEPARATED VIA TRENCH STRUCTURES AND FABRICATION PROCESS THEREFOR
BACK-CONTACTED SOLAR CELLS WITH DOPED POLYSILICON REGIONS SEPARATED VIA TRENCH STRUCTURES AND FABRICATION PROCESS THEREFOR
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机译:通过沟槽结构分离的掺杂多晶硅区域的背接触式太阳能电池及其制造工艺
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摘要
A solar cell includes polysilicon P-type and N-type doped regions on a backside (106) of a substrate (103), such as a silicon wafer. A trench structure (104) separates the P-type doped region (101) from the N-type doped region (102). Each of the P-type and N-type doped regions may be formed over a thin dielectric layer (113). The trench structure (104) may include a textured surface (114) for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
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