首页> 外国专利> BRAZING FILLER METAL, BRAZING FILLER METAL PASTE, CERAMIC CIRCUIT SUBSTRATE, CERAMIC MASTER CIRCUIT SUBSTRATE, AND POWER SEMICONDUCTOR MODULE

BRAZING FILLER METAL, BRAZING FILLER METAL PASTE, CERAMIC CIRCUIT SUBSTRATE, CERAMIC MASTER CIRCUIT SUBSTRATE, AND POWER SEMICONDUCTOR MODULE

机译:钎焊填充金属,钎焊填充金属糊,陶瓷电路基板,陶瓷主电路基板和功率半导体模块

摘要

To provide a brazing material for maintaining bonding strength between ceramic substrate and metal plate at a conventionally attainable level, while addition amount of In is reduced, and a brazing material paste using the same. A mixture powder provided by mixing alloy powder composed of Ag, In, and Cu, Agpowder, and active metal hydride powder, the mixture powder containing active metal hydride powder with a 10-to-25-µm equivalent circle average particle diameter by 0.5 to 5. 0 mass%, the equivalent circle average particle diameters for the alloy powder, Ag powder, and active metal hydride powder having a relationship: alloy powder ‰¥ active metal hydride powder Ag powder, and the powder mixture having a particle size distribution of d10 of 3 to 10 µm, d50 of 10 to 35 µm, and d90 of 30 to 50 µm, and in the frequency distribution, a peak of the distribution existing between d50 and d90.
机译:提供一种钎焊材料,其用于在减少In的添加量的同时将陶瓷基板与金属板之间的结合强度维持在常规可获得的水平,并使用该钎焊材料进行糊化。将由Ag,In和Cu构成的合金粉末,Agpowder和活性金属氢化物粉末混合而得到的混合物粉末,该混合物粉末包含当量圆平均粒径为10〜25μm的活性金属氢化物粉末0.5〜 5. 0质量%,具有以下关系的合金粉末,Ag粉末和活性金属氢化物粉末的当量圆平均粒径:合金粉末≥¥活性金属氢化物粉末> Ag粉末,且具有粒径分布的粉末混合物d10为3至10μm,d50为10至35μm,d90为30至50μm,并且在频率分布中,在d50与d90之间存在分布的峰值。

著录项

  • 公开/公告号EP2727898A4

    专利类型

  • 公开/公告日2016-03-23

    原文格式PDF

  • 申请/专利权人 HITACHI METALS LTD.;

    申请/专利号EP20120803785

  • 申请日2012-07-02

  • 分类号B22F7/06;B22F9/02;B23K35/02;B23K35/30;B23K35/36;B23K101/40;C04B37/02;C22C1/04;C22C5/06;C22C5/08;H01L23/15;H01L23/373;H05K1/03;H05K3/38;

  • 国家 EP

  • 入库时间 2022-08-21 14:50:33

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