首页> 外国专利> PSEUDO DUAL PORT MEMORY USING A DUAL PORT CELL AND A SINGLE PORT CELL WITH ASSOCIATED VALID DATA BITS AND RELATED METHODS

PSEUDO DUAL PORT MEMORY USING A DUAL PORT CELL AND A SINGLE PORT CELL WITH ASSOCIATED VALID DATA BITS AND RELATED METHODS

机译:使用具有相关有效数据位的双端口单元和单端口单元的伪双端口存储器及相关方法

摘要

A pseudo dual port memory includes a set of dual port memory cells having a read port and a write port, and configured to store data words in each of a plurality of addressed locations, and a set of single port memory cells having a read/write port, and configured to store data words in each of a plurality of addressed locations. A valid data storage unit is configured to store valid bits corresponding to the addressed locations of the set of dual port memory cells and the set of single port memory cells. Control circuitry is configured to access the addressed locations of the set of dual port memory cells and the set of single port memory cells. The control circuitry performs a simultaneous write operation using the write port of the set of dual port memory cells and the read/write port of the set of single port memory cells, and updates corresponding valid bits in the valid data storage unit, and performs a parallel read operation, at a same addressed location of the set of dual port memory cells and the set of single port memory cells, using the read port of the set of dual port memory cells and the read/write port of the set of single port memory cells, and determining which stored data word is valid based upon the corresponding valid bits in the valid data storage unit.
机译:伪双端口存储器包括:具有读取端口和写入端口的一组双端口存储单元,并且被配置为在多个寻址位置中的每一个中存储数据字;以及具有读取/写入的一组单端口存储单元端口,并配置为将数据字存储在多个寻址位置的每一个中。有效数据存储单元被配置为存储与该组双端口存储单元和该组单端口存储单元的寻址位置相对应的有效位。控制电路被配置为访问该组双端口存储单元和该组单端口存储单元的寻址位置。控制电路使用该组双端口存储单元的写端口和该组单端口存储单元的读/写端口执行同时写操作,并更新有效数据存储单元中的相应有效位,并执行在双端口存储单元组和单端口存储单元组的相同寻址位置处,使用双端口存储单元组的读取端口和单端口组的读/写端口进行并行读取操作存储单元,并根据有效数据存储单元中的相应有效位确定哪个存储的数据字有效。

著录项

  • 公开/公告号EP3038109A1

    专利类型

  • 公开/公告日2016-06-29

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS INTERNATIONAL N.V.;

    申请/专利号EP20150187696

  • 发明设计人 RAWAT HARSH;JAIN PIYUSH;

    申请日2015-09-30

  • 分类号G11C8/16;G11C7/10;G11C11/419;G11C11/418;

  • 国家 EP

  • 入库时间 2022-08-21 14:48:51

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