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STRESS CONTROL DURING PROCESSING OF A MEMS DIGITAL VARIABLE CAPACITOR (DVC)

机译:MEMS数字可变电容器(DVC)加工过程中的应力控制

摘要

The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.
机译:本发明总体上涉及一种MEMS数字可变电容器(DVC)(900)及其制造方法。 MEMS DVC内的可移动板(938)应具有相同的应力水平,以确保MEMS DVC的正常运行。为了获得相同的应力水平,可动板在制造过程中与CMOS接地断开。在可移动板完全形成后,才将其电耦合到CMOS接地。通过使用形成上拉电极的同一层(948)与将可移动板电耦合到CMOS接地的层而发生耦合。由于同一层将可移动板耦合到CMOS接地,并且还为MEMS DVC提供上拉电极,因此在同一处理步骤中会发生沉积。通过在形成之后将可移动板电耦合至CMOS接地,可移动板的每一层中的应力可以基本相同。

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