CERAMIC SEMICONDUCTOR CAPABLE OF INCREASING PERIPHERAL SUPEROXIDE ANION CONCENTRATION AFTER GENERATING HEAT

摘要

PROBLEM TO BE SOLVED: To provide a ceramic semiconductor capable of increasing a peripheral superoxide anion (O) concentration through heat generation after electrification, and passing of air.SOLUTION: A ceramic semiconductor 10 is a ceramic semiconductor in which an oxide material capable of reinforcing an electric charge effect in molding is doped, and which includes a plurality of penetrating penetration holes 11. The ceramic semi-conductor 10 is configured such that the oxide material is TiO, Zn, WO, FeOor SrTiO, and the bore diameter of the penetration hole 11 is 1-2 mm.EFFECT: In the ceramic semiconductor 10 generating electric current and heat after electrification, external layer electrons of the ceramic semiconductor are separated to stay in the penetration holes 11 of the ceramic semiconductor 10, and are accumulated in the penetration holes 11 so as to form an electron cloud, and after air passes the penetration holes 11, oxygen and electrons in air are recombined after collision to form superoxide anion (O) and increase an amount of Oin the periphery, and by the high concentration O, effects of sterilization, cell activation and wound accretion assistance are formed.SELECTED DRAWING: Figure 1